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| inchange semiconductor product specification silicon npn power transistors TIP41/41a/41b/41c description ? ? with to-220c package ? complement to type tip42/42a/42b/42c applications ? for medium power linear switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit TIP41 40 TIP41a 60 TIP41b 80 v cbo collector-base voltage TIP41c open emitter 100 v TIP41 40 TIP41a 60 TIP41b 80 v ceo collector-emitter voltage TIP41c open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 6 a i cm collector current-pulse 10 a i b base current 2 a t c =25 ?? 65 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors TIP41/41a/41b/41c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit TIP41 40 TIP41a 60 TIP41b 80 v ceo(sus) collector-emitter sustaining voltage TIP41c i c =30ma; i b =0 100 v v cesat collector-emitter saturation voltage i c =6a; i b =0.6a 1.5 v v be base-emitter on voltage i c =6a ; v ce =4v 2.0 v TIP41 v ce =40v; v eb =0 TIP41a v ce =60v; v eb =0 TIP41b v ce =80v; v eb =0 i ces collector cut-off current TIP41c v ce =100v; v eb =0 0.4 ma TIP41/41a v ce =30v; i b =0 i ceo collector cut-off current TIP41b/41c v ce =60v; i b =0 0.7 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =0.3a ; v ce =4v 30 h fe-2 dc current gain i c =3a ; v ce =4v 15 75 f t transiton frequency i c =0.5a ; v ce =10v 3 mhz inchange semiconductor product specification 3 silicon npn power transistors TIP41/41a/41b/41c package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon npn power transistors TIP41/41a/41b/41c |
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